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| SEMICONDUCTOR TECHNICAL DATA ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES 2.5 Gate Drive. Low Threshold Voltage : Vth=0.5 High Speed. Small Package. Enhancement-Mode. KTK5164S N CHANNEL MOS FIELD EFFECT TRANSISTOR L E B L DIM A MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 1.5V. 2 3 D B C D E G H J K A G H 1 P P L M N P Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range VDS VGSS ID PD Tch Tstg 60 20 200 200 150 -55 150 V V mA mW 1. SOURCE 2. GATE 3. DRAIN K CHARACTERISTIC SYMBOL RATING UNIT M SOT-23 EQUIVALENT CIRCUIT D Marking G J MAXIMUM RATINGS (Ta=25 ) C N Lot No. Type Name S KM THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time SYMBOL IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss tr ton tf toff VGS= TEST CONDITION 16V, VDS=0V ID=100 A, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA VDS=10V, ID=50mA ID=50mA, VGS=2.5V VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz 10V 0 10s VIN 50 RL I D =100mA V OUT MIN. 60 0.5 100 - TYP. 1.5 55 13 40 8 14 35 75 MAX. 1 1 1.5 2 65 18 50 - UNIT A V A V mS pF pF pF nS V IN :t r , t f < 5ns D.U. < 1% (Z OUT =50) = V DD = 30V 2002. 10. 17 Revision No : 1 1/3 KTK5164S I D - VDS I D - V DS 200 DRAIN CURRENT I D (mA) 160 120 1.8V 2.2V 2.0V COMMON SOURCE Ta=25 C (LOW VOLTAGE REGION) 200 DRAIN CURRENT I D (mA) 160 120 80 40 0 20 0 0.4 0.8 1.2 2.2V 2.0V COMMON SOURCE Ta=25 C 80 40 0 0 4 8 12 1.8V 1.6V VGS =1.4V 1.6V VGS =1.4V 16 1.6 2.0 DRAIN-SOURCE VOLTAGE V DS (V) GATE-SOURCE VOLTAGE VDS (V) Yfs FORWARD TRANSFER ADMITTANCE Yfs (mS) 1K COMMON SOURCE VDS =10V Ta=25 C - ID I D - V GS 100 COMMON SOURCE VDS =10V Ta=25 C DRAIN CURRENT I D (mA) 10 100 10 100 1 10 1 DRAIN CURRENT I D (mA) 0.1 1 2 3 4 5 GATE-SOURCE VOTAGE VGS (V) 500 300 CAPACITANCE C (pF) DRAIN-SOURCE ON VOLTAGE V DS(ON) (mV) C - V DS COMMON SOURCE VGS =0 f=1MHz Ta=25 C C iss Coss C rss VDS(ON) - I D 300 COMMON SOURCE VGS =0 f=1MHz Ta=25 C 100 50 30 100 50 30 10 5 3 0.1 0.3 0.5 1 3 5 10 10 5 10 30 50 100 300 30 50 DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT I D (mA) 2002. 10. 17 Revision No : 1 2/3 KTK5164S I DR - VDS DRAIN REVERSE CURRENT I DR (A) 2 1 0.3 0.1 0.03 0.01 COMMON SOURCE VGS =0 Ta=25 C D G S I DR t - ID 1K SWITCHING TIME t (ns) 300 100 30 10 3 1 0.3 0.01 ID t off tf t on VOUT RL tr D.U. < 1% = VIN :t r , t f < 5ns (Z OUT =50) COMMON SOURCE Ta=25 C 10s 50 10V 0 V IN VDD 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 0.03 0.05 0.1 0.3 0.5 DRAIN-SOURCE VOTAGE V DS (V) DRAIN CURRENT I D (mA) P D - Ta DRAIN POWER DISSIPATION PD (mW) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 2002. 10. 17 Revision No : 1 3/3 |
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